ME Seminar Series: Controlled Growth of Mono- and Few-Layer Graphene on Different Substrates

Graphene is currently considered to be a revolutionary material due to its fascinating properties. The envisioned use of this material in different applications depends on the development of processes that will make possible the growth of large-area and high-quality layers. The ideal synthesis method would allow for precisely controlled formation of graphene (e.g. mono- to few-layer) directly on a substrate of choice. In my presentation I will show our recent results on the controlled growth of this material (as nanoribbons or extended 2D layers) on different templates. Particularly interesting is the growth of graphene achieved by molecular beam epitaxy.Marcelo Lopes received the Ph.D. degree in Physics from the Federal University of Rio Grande do Sul, Porto Alegre, Brazil, in 2005. From 2006 to 2010, he was with the Peter Gruenberg Institute 9 (PGI-9-IT), Forschungszentrum Juelich, Juelich, Germany, as a Humboldt fellow. His work in Juelich was focused on the development of rare-earth based high-k dielectrics deposited by molecular beam deposition. Since 2010 he works at the Paul-Drude Institute for Solid State Electronics, Berlin, Germany, as a group leader for graphene epitaxy. He has recently been promoted to senior scientist. He is author or co-author of more than 60 papers.